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专利名称：Memory device with capacitor and diode发明人：Howard Lee Tigelaar,Andrew Marshall申请号：US119610申请日：20071220公开号：US07539044B1公开日：20090526
专利附图：
摘要：One embodiment of the present invention relates to an integrated circuit thatincludes a memory cell. The memory cell includes a capacitor configured to store acharge or voltage. The capacitor includes a first semiconductor fin having a first
conductivity type and overlying a semiconductor body, a dielectric overlying at least part
of the semiconductor fin, and a gate electrode overlying the dielectric. The memory cellalso includes a diode. The diode includes an end portion of the first semiconductor finand a second semiconductor fin that forms a junction with the end portion of the firstsemiconductor fin. The second semiconductor fin has a second conductivity type andincludes first and second legs in different directions from the junction. Other devices andmethods are also disclosed.
申请人：Howard Lee Tigelaar,Andrew Marshall
地址：Allen TX US,Dallas TX US
国籍：US,US
代理人：Rose Alyssa Keagy,Wade J. Brady, III,Frederick J. Telecky, Jr.
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