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专利名称：Non-volatile memory devices and systems
including bad blocks address re-mappedand methods of operating the same
发明人：Dae Seok Byeon申请号：US12122369申请日：20080516公开号：US07916540B2公开日：20110329
专利附图：
摘要：A method of operating a non-volatile memory device included in a memory cardcan be provided by re-mapping addresses of bad blocks in a first non-volatile MAT in a
memory card and re-mapping addresses of bad blocks in a second non-volatile MAT inthe memory card, the second non-volatile MAT including blocks that are addressmapped with blocks in the first non-volatile MAT. Also a method of scanning a non-volatile memory device for bad blocks can be provided by sequentially scanning blocks ina non-volatile memory device for data indicating that a respective block is a bad blockstarting at a starting block address that is above a lowermost block address of the non-volatile memory device, wherein the starting block address is based on a yield for thenon-volatile memory device.
申请人：Dae Seok Byeon
地址：Gyeonggi-do KR
国籍：KR
代理机构：Myers Bigel Sibley & Sajovec, P.A.
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