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专利名称：STRUCTURES AND METHODS FOR A FIELD-RESET SPIN-TORQUE MRAM
发明人：Thomas ANDRE,Saied TEHRANI,Jon
SLAUGHTER,Nicholas RIZZO
申请号：US127838申请日：20100528
公开号：US20110292714A1公开日：20111201
专利附图：
摘要：An apparatus and method of programming a spin-torque magnetoresistivememory array includes a metal reset line positioned near each of a plurality of
magnetoresistive bits and configured to set the plurality of magnetoresistive memoryelements to a known state by generating a magnetic field when an electrical currentflows through it. A spin torque transfer current is then applied to selected ones of themagnetoresistive bits to switch the selected bit to a programmed state. In another modeof operation, a resistance of the plurality of bits is sensed prior to generating themagnetic field. The resistance is again sensed after the magnetic field is generated andthe data represented by the initial state of each bit is determined from the resistancechange. A spin torque transfer current is then applied only to those magnetoresistive bitshaving a resistance different from prior to the magnetic field being applied.
申请人：Thomas ANDRE,Saied TEHRANI,Jon SLAUGHTER,Nicholas RIZZO
地址：Austin TX US,Paradise Valley AZ US,Tempe AZ US,Gilbert AZ US
国籍：US,US,US,US
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