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专利名称：Method and device for heat treatment发明人：Takaaki Matsuoka申请号：US11211493申请日：20050826
公开号：US20050279138A1公开日：20051222
专利附图：
摘要：After carrying an LCD substrate in a reaction container of a heat treatment unit,blowing a previously heated helium gas from a gas supply part, which opposes to thesurface of the LCD substrate, over the entire surface of the LCD substrate. Thetemperature of the LCD substrate is raised by radiation heat of a heater and heat
exchange with the helium gas. After performing CVD or annealing in the reactioncontainer, cooling the LCD substrate by blowing a gas for heat exchange having a
temperature about a room temperature from the gas supply part over the entire surfaceof the LCD substrate. Return the cooled LCD substrate to a carrier in the carrier chambervia a conveyance chamber.
申请人：Takaaki Matsuoka
地址：Minato-ku JP
国籍：JP
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