专利内容由知识产权出版社提供
专利名称：Method of forming self-aligned, trenchless
mangetoresistive random-access memory(MRAM) structure with sidewall containmentof MRAM structure
发明人：Trung T. Doan,Roger Lee,Dennis
Keller,Gurtej Sandhu,Ren Earl
申请号：US09805916申请日：20010315公开号：US06653154B2公开日：20031125
专利附图：
摘要：This invention pertains to a method of fabricating an MRAM structure. Themethod includes forming a pinned layer within a protective region defined by sidewallsformed over a substrate. The protective sidewalls facilitate formation of the MRAMstructure by a self-aligning process.
申请人：MICRON TECHNOLOGY, INC.
代理机构：Dickstein Shapiro Morin & Oshinsky LLP
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