RA55H3340M资料

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA55H3340M

BLOCK DIAGRAM 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 330-400MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

231451 RF Input (Pin) 2 Gate Voltage (VGG), Power Control3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2S ORDERING INFORMATION:

ORDER NUMBER RA55H3340M-101

SUPPLY FORM Antistatic tray, 10 modules/tray

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MITSUBISHI RF POWER MODULE

RA55H3340M

RATING

UNIT

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER VDD Drain Voltage VGG Gate Voltage Pin Input Power Pout Output Power

Tcase(OP) Operation Case Temperature Range Tstg

Storage Temperature Range

CONDITIONS

VGG<5V 17 V f=330-400MHz,

ZG=ZL=50Ω

100 mW-30 to +110 -40 to +110

°C °C

VDD<12.5V, Pin=0mW 6 V 65 W Note.1.The above parameters are independently guaranteed.

Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Frequency Range Pout Output Power ηT 2fo ρin

Total Efficiency 2 Harmonic Input VSWR

nd

CONDITIONS

VDD=12.5V

VGG=5V Pin=50mW

VDD=10.0-15.2V, Pin=25-70mW,

Pout<65W (VGG control), Load VSWR=3:1

VDD=15.2V, Pin=50mW, Pout=55W (VGG control), Load VSWR=20:1

MIN TYP MAX

55 35

-50

UNIT

W % dBc

330 400 MHz

3:1 — 1 mA No parasitic oscillationNo degradation or

destroy

— —

IGG Gate Current — Stability —

Load VSWR Tolerance

Note. All parameters, conditions, ratings, and limits are subject to change without notice.

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MITSUBISHI RF POWER MODULE

RA55H3340M

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY,2nd, 3rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY-30 8080VDD=12.5V 7070Pout-40VGG=5V 6060Pin=50mW 5050-50ηT 3rd4040 -60VDD=12.5V30302nd VGG=5V2020 Pin=50mW-701010ρin

-8000

320330340350360370380390400410320330340350360370380390400410

FREQUENCY f(MHz)FREQUENCY f(MHz)

OUTPUT POWER Pout(W)INPUT VSWR ρin (-)OUTPUT POWER, POWER GAIN andDRAIN CURRENT versus INPUT POWER60OUTPUT POWERPout(dBm)POWER GAIN Gp(dB)50403020100-10IDDf=330MHz,VDD=12.5V,VGG=5VGpPoutTOTALEFFICIENCYηT(%)HARMONICS (dBc)OUTPUT POWER, POWER GAIN andDRAIN CURRENT versus INPUT POWER24DRAIN CURRENT IDD(A)OUTPUT POWERPout(dBm)POWER GAIN Gp(dB)2016128406050403020100-10-505101520INPUT POWER Pin(dBm)IDDf=365MHz,VDD=12.5V,VGG=5VGpPout24201612840DRAIN CURRENT IDD(A)-5051015INPUT POWER Pin(dBm)20OUTPUT POWER, POWER GAIN andDRAIN CURRENT versus INPUT POWER60OUTPUT POWERPout(dBm)POWER GAIN Gp(dB)50403020100-10-505IDDf=400MHz,VDD=12.5V,VGG=5VGpPout2420161284020DRAIN CURRENT IDD(A)1015INPUT POWER Pin(dBm)OUTPUT POWER and DRAIN CURRENTversus DRAIN VOLTAGE12011010090807060504030201002OUTPUT POWER Pout(W)OUTPUT POWER Pout(W)f=330MHz,VGG=5V,Pin=50mWOUTPUT POWER and DRAIN CURRENTversus DRAIN VOLTAGE242220181614121082012011010090807060504030201002f=365MHz,VGG=5V,Pin=50mWPoutPoutIDDIDD242220181614121082016DRAIN CURRENT IDD(A)468101214DRAIN VOLTAGE VDD(V)1681012DRAIN VOLTAGE VDD(V)14RA55H3340M

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DRAIN CURRENT IDD(A)元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE

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MITSUBISHI RF POWER MODULE

RA55H3340M

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE12011010090807060504030201002OUTPUT POWER Pout(W)f=400MHz,VGG=5V,Pin=50mWPoutIDD24222018161412108201681012DRAIN VOLTAGE VDD(V)14OUTPUT POWER and DRAIN CURRENTversus GATE VOLTAGE90OUTPUT POWER Pout(W)807060504030201002.533.544.5GATE VOLTAGE VGG(V)55.5IDDf=330MHz,VDD=12.5V,Pin=50mWPoutDRAIN CURRENT IDD(A)OUTPUT POWER and DRAIN CURRENTversus GATE VOLTAGE18DRAIN CURRENT IDD(A)OUTPUT POWER Pout(W)1614121082090807060504030201002.533.544.5GATE VOLTAGE VGG(V)55.5IDDf=365MHz,VDD=12.5V,Pin=50mWPout1816141210820DRAIN CURRENT IDD(A)OUTPUT POWER and DRAIN CURRENTversus GATE VOLTAGE90OUTPUT POWER Pout(W)807060504030201002.533.544.5GATE VOLTAGE VGG(V)55.5f=400MHz,VDD=12.5V,Pin=50mWPout181614IDD1210820RA55H3340M

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DRAIN CURRENT IDD(A)18 July 2007

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MITSUBISHI RF POWER MODULE

RA55H3340M

OUTLINE DRAWING (mm)

66.0 ±0.53.0 ±0.3 7.25 ±0.8 60.0 ±0.551.5 ±0.52-R2 ±0.5 21.0 ±0.5 9.5 ±0.5 51 23414.0 ±1 2.0 ±0.5 Ø0.60 ±0.1512.0 ±1 16.5 ±1 43.5 ±1 55.5 ±1 3.1 +0.6/-0.4 0.09 ±0.02 7.5 ±0.5 (50.4)2.3 ±0.3 4.0 ±0.3 RA55H3340M

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(9.88) 17.0 ±0.5 1 RF Input (Pin) 2 Gate Voltage (VGG)3 Drain Voltage (VDD)4 RF Output (Pout) 5 RF Ground (Case) 18 July 2007

元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE

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MITSUBISHI RF POWER MODULE

RA55H3340M

TEST BLOCK DIAGRAM

Pre- Signal Generator Attenuator amplifier Attenuator

C1, C2: 4700pF, 22uF in parallel

EQUIVALENT CIRCUIT

2

1

Power Meter 12DUT345Spectrum AnalyzerDirectional CouplerZG=50ΩZL=50Ω Directional Coupler AttenuatorPower MeterC1C2- +DC PowerSupply VGG+ -DC PowerSupply VDD1 RF Input (Pin) 2 Gate Voltage (VGG)3 Drain Voltage (VDD)4 RF Output (Pout) 5 RF Ground (Case) 345RA55H3340M

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OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MODULE

RA55H3340M

PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:

Construction:

This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the

substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.

Following conditions must be avoided:

a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)

c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting:

Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added).

A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.

Soldering and Defluxing:

This module is designed for manual soldering.

The leads must be soldered after the module is screwed onto the heat sink.

The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum of three seconds.

Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At Pout=55W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:

Pout Rth(ch-case)Pin IDD @ ηT=35%VDD

Stage

(W) (W) (V) (°C/W) (A)

st1 0.05 1.5 23.0 0.26 2nd 1.0 13.0 2.4 3.10 12.5 3rd 13.0 55.0 1.2 8.15 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:

Tch1 = Tcase + (12.5V x 0.26A – 1.5W + 0.05W) x 23.0°C/W = Tcase + 41.4 °C Tch2 = Tcase + (12.5V x 3.10A - 13.0W + 1.5W) x 2.4°C/W = Tcase + 65.4 °C Tch3 = Tcase + (12.5V x 8.15A - 55.0W + 13.0W) x 1.2°C/W = Tcase + 71.9 °C

For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=55W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is:

Rth(case-air) = (90°C - 60°C) / (55W/38% – 55W + 0.05W) = 0.33 °C/W

When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:

Tch1 = Tair + 71.4 °C Tch2 = Tair + 95.4 °C Tch3 = Tair + 101.9 °C

The 175°C maximum rating for the channel temperature ensures application under derated conditions.

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OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MODULE

RA55H3340M

Output Power Control:

Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG).

When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain.

Around VGG=4V, the output power and drain current increases substantially.

Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin.

The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω?

Frequent on/off switching:

In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress.

Quality:

Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios.

This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, butthere is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire orproperty damage. Remember to give due consideration to safety when making your circuit designs, with appropriatemeasures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.

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SALES CONTACT

JAPAN:

Mitsubishi Electric Corporation

Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100

Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861

HONG KONG:

Mitsubishi Electric Hong Kong Ltd. Semiconductor Division

41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong

Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822 SINGAPORE:

Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road

#3-01/02 Mitsubishi Electric Building, Singapore 159943

Email: semicon@asia.meap.com Phone: +65 732 308 Fax: +65 738 984 TAIWAN:

Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C.

Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793

U.S.A.:

Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085

Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129 CANADA:

Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue

Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918

GERMANY:

Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8

D-40880 Ratingen, Germany

Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-4140 FRANCE:

Mitsubishi Electric Europe B.V. Semiconductor

25 Boulevard des Bouvets

F-92741 Nanterre Cedex, France

Email: semis.info@meg.mee.com Phone: +33-1-55685-668 Fax: +33-1-55685-739 ITALY:

Mitsubishi Electric Europe B.V. Semiconductor

Centro Direzionale Colleoni,

Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212 U.K.:

Mitsubishi Electric Europe B.V. Semiconductor

Travellers Lane, Hatfield

Hertfordshire, AL10 8XB, England

Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837

AUSTRALIA:

Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road

Rydalmere, NSW 2116 Sydney, Australia

Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 98 Fax: +61 2 9684-7208 +61 2 9684 7245

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