专利内容由知识产权出版社提供
专利名称：Method for fabricating a gridded Schottky
barrier field effect transistor
发明人：Herbert Goronkin,Richard W. Aldrich申请号：US05/9763申请日：19760116公开号：US03999281A公开日：19761228
摘要：A method is provided for fabricating a gridded Schottky barrier field effecttransistor and to the transistor produced thereby. The transistor is constructed bymeans of a single high resolution mask which does not require alignment to anyreference line. Utilizing the masking properties of an oxidation layer on the sides of theetched slots, platinum is deposited only at the bottom of the groove thereby eliminatingthe requirement of an additional photo-masking step or the necessity of subsequentremoval of platinum from other surfaces of the wafer.
申请人：THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OFTHE AIR FORCE
代理人：Joseph E. Rusz,George Fine
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