Preliminary IPT004N03LOptiMOSTM Power-MOSFETFeatures• Optimized for e-fuse and ORing application• Very low on-resistance RDS(on) @ VGS=4.5 V• 100% avalanche tested• Superior thermal resistance• N-channel• Qualified according to JEDEC1) for target applications• Pb-free lead plating; RoHS compliantProduct Summary VDS RDS(on),max ID QOSS QG(0V..10V) 30 0.4 300 141 252 V mW A nC nC PG-HSOF-8-1 Type IPT004N03L Package PG-HSOF-8 Marking 004N03L Maximum ratings, at Tj=25 °C, unless otherwise specifiedParameterContinuous drain currentSymbolConditionsIDVGS=10 V, TC=25 °CVGS=10 V, TC=100 °CVGS=4.5 V, TC=25 °CVGS=4.5 V, TC=100 °CVGS=10 V, TA=25 °C, RthJA=40 K/W2)Pulsed drain current3)Avalanche energy, single pulse4)Gate source voltage1)2)Value300300300300UnitA721200830±20mJVID,pulseEASVGSTC=25 °CID=150 A J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.3)4) See figure 3 for more detailed information See figure 13 for more detailed informationRev. 1.2page 12013-08-13
Preliminary IPT004N03LMaximum ratings, at Tj=25 °C, unless otherwise specifiedParameterPower dissipationSymbolConditionsPtotTC=25 °CTA=25 °C, RthJA=40 K/W2)Operating and storage temperatureIEC climatic category; DIN IEC 68-1Tj, TstgValue3003.8-55 ... 17555/175/56°CUnitWParameterSymbolConditionsmin.Valuestyp.max.UnitThermal characteristicsThermal resistance, junction - caseDevice on PCBRthJCRthJA6 cm² cooling area2)minimum footprintElectrical characteristics, at Tj=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltageGate threshold voltageZero gate voltage drain currentV(BR)DSSVGS=0 V, ID=10 mAVGS(th)IDSSVDS=VGS, ID=250 µAVDS=30 V, VGS=0 V, Tj=25 °CVDS=30 V, VGS=0 V, Tj=125 °CGate-source leakage currentDrain-source on-state resistanceIGSSRDS(on)VGS=20 V, VDS=0 VVGS=4.5 V, ID=150 AVGS=10 V, ID=150 AGate resistanceTransconductanceRGgfs|VDS|>2|ID|RDS(on)max, ID=30 A300.7---0.1-2.21µAV------0.54062K/W----1.416010100.440.372.73201001000.50.45.4-WSnAmWRev. 1.2page 22013-08-13
Preliminary IPT004N03LParameterSymbolConditionsmin.Dynamic characteristicsInput capacitanceOutput capacitanceReverse transfer capacitanceTurn-on delay timeRise timeTurn-off delay timeFall timeGate Charge Characteristics5)Gate to source chargeGate charge at thresholdGate to drain chargeSwitching chargeGate charge totalGate plateau voltageGate charge totalQgsQg(th)QgdQswQgVplateauQgVDD=15 V, ID=30 A, VGS=0 to 10 VVDS=0.1 V, VGS=0 to 4.5 VVDD=15 V, VGS=0 VVDD=15 V, ID=30 A, VGS=0 to 4.5 V-------402928381222.225253-36-163-336VnCnCCissCossCrsstd(on)trtd(off)tfVDD=15 V, VGS=10 V, ID=30 A, RG,ext=1.6 WVGS=0 V, VDS=15 V, f=1 MHz-------18000540059030171493724000pF7200-----nsValuestyp.max.UnitGate charge total, sync. FETOutput chargeReverse DiodeDiode continuous forward currentDiode pulse currentDiode forward voltageQg(sync)Qoss--105141-188ISIS,pulseVSDTC=25 °CVGS=0 V, IF=150 A, Tj=25 °CVR=15 V, IF=100 A, diF/dt=400 A/µs-----0.8330012001AVReverse recovery chargeQrr-100-nC5) See figure 16 for gate charge parameter definitionRev. 1.2page 32013-08-13
Preliminary IPT004N03L1 Power dissipationPtot=f(TC)2 Drain currentID=f(TC); VGS≥10 V350 350 300 300 250 250 Ptot [W] 200 200 150 100 50 ID [A] 0 40 80 120 160 200 150 100 50 0 0 0 40 80 120 160 200 TC [°C] TC [°C] 3 Safe operating areaID=f(VDS); TC=25 °C; D=0parameter: tp10000 limited by on-state resistance 4 Max. transient thermal impedanceZthJC=f(tp)parameter: D=tp/T101 1 µs 1000 10 µs 100 µs 1 ms 10 ms 100 ZthJC [K/W] 100 0.5 ID [A] DC 10-1 0.2 0.1 0.05 0.02 0.01 single pulse 10 10-2 1 0.1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 VDS [V] tp [s] Rev. 1.2page 42013-08-13 Preliminary IPT004N03L5 Typ. output characteristicsID=f(VDS); Tj=25 °Cparameter: VGS1200 10 V 4.5 V 4 V 5 V 3.5 V 6 Typ. drain-source on resistanceRDS(on)=f(ID); Tj=25 °Cparameter: VGS0.6 3.2 V 3.5 V 3.2 V 1000 0.5 4 V 4.5 V 5 V 800 0.4 7 V 8 V 10 V 3 V 600 RDS(on) [mW] 3 ID [A] 0.3 2.8 V 400 0.2 200 0.1 0 0 1 2 0 0 100 200 300 400 500 600 700 VDS [V] ID [A] 7 Typ. transfer characteristicsID=f(VGS); |VDS|>2|ID|RDS(on)maxparameter: Tj1200 8 Typ. forward transconductancegfs=f(ID); Tj=25 °C800 700 1000 600 800 500 600 gfs [S] 175 °C 25 °C ID [A] 400 300 400 200 200 100 0 0 1 2 3 4 5 0 0 40 80 120 160 VGS [V] ID [A] Rev. 1.2page 52013-08-13
Preliminary IPT004N03L9 Drain-source on-state resistanceRDS(on)=f(Tj); ID=150 A; VGS=10 V10 Typ. gate threshold voltageVGS(th)=f(Tj); VGS=VDS; ID=1 mA1 2.5 0.8 2 RDS(on) [mW] 0.4 VGS(th) [V] 0.6 1.5 1 mA typ 1 0.2 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitancesC=f(VDS); VGS=0 V; f=1 MHz12 Forward characteristics of reverse diodeIF=f(VSD)parameter: Tj105 104 Ciss 103 104 C [pF] Coss IF [A] 102 25 °C 103 101 Crss 175 °C 102 0 5 10 15 20 25 100 0 0.5 1 1.5 VDS [V] VSD [V] Rev. 1.2page 62013-08-13 Preliminary IPT004N03L13 Avalanche characteristicsIAS=f(tAV); RGS=25 Wparameter: Tj(start)1000 14 Typ. gate chargeVGS=f(Qgate); ID=30 A pulsedparameter: VDD12 15 V 10 6 V 24 V 100 25 °C 100 °C 8 IAV [A] 125 °C VGS [V] 1000 6 10 4 2 1 1 10 100 0 0 50 100 150 200 250 300 tAV [µs] Qgate [nC] 15 Drain-source breakdown voltageVBR(DSS)=f(Tj); ID=10 mA16 Gate charge waveforms34 VGS32 Qg30 VBR(DSS) [V] 28 26 Vgs(th)24 22 Qg(th)Qgs-20 20 60 100 140 180 QswQgdQgate20 -60 Tj [°C] Rev. 1.2page 72013-08-13
Preliminary IPT004N03LPackage OutlinePG-HSOF-8: OutlineRev. 1.2page 82013-08-13
Preliminary IPT004N03LPublished byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGLegal DisclaimerThe information given in this document shall in no event be regarded as a guarantee ofconditions or characteristics. With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device,Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rightsof any third party.InformationFor further information on technology, delivery terms and conditions and prices, pleasecontact the nearest Infineon Technologies Office (www.infineon.com).WarningsDue to technical requirements, components may contain dangerous substances. For informationon the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only withthe express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affectthe safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the useror other persons may be endangered.Rev. 1.2page 92013-08-13
