DTA123JM3T5G资料

DTA114EM3T5G Series

Preferred Devices

Digital Transistors (BRT)

PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resistor and a base−emitter resistor. Thedigital transistor eliminates these individual components byintegrating them into a single device. The use of a digital transistor canreduce both system cost and board space. The device is housed in theSOT−723 package which is designed for low power surface mountapplications.

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PNP SILICONDIGITALTRANSISTORS••••••

Simplifies Circuit DesignReduces Board Space

Reduces Component Count

The SOT−723 Package can be Soldered using Wave or Reflow.Available in 4 mm, 8000 Unit Tape & ReelThese are Pb−Free Devices

PIN 1BASE(INPUT)R1R2PIN 3COLLECTOR(OUTPUT)MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

RatingCollector-Base VoltageCollector-Emitter VoltageCollector CurrentSymbolVCBOVCEOICValue5050100UnitVdcVdcmAdc3PIN 2EMITTER(GROUND)MARKINGDIAGRAMXX M21SOT−723CASE 631AAStyle 1= Specific Device Code(See Marking Table on page 2)= Date CodexxMORDERING INFORMATION

See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future useand best overall value.

© Semiconductor Components Industries, LLC, 20041

February, 2004 − Rev. 0

Publication Order Number:

DTA114EM3/D

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DTA114EM3T5G Series

ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES

DeviceDTA114EM3T5GDTA124EM3T5G*DTA144EM3T5GDTA114YM3T5GDTA114TM3T5GDTA143TM3T5G*DTA123EM3T5G*DTA143EM3T5G*DTA143ZM3T5G*DTA124XM3T5GDTA123JM3T5G*DTA115EM3T5GDTA144WM3T5G*Marking6A6B6C6D6E6F6H6J6K6L6M6N6PR1 (K)10224710104.72.24.74.7222.210047R2 (K)10224747∞∞2.24.747474710022PackageShipping†SOT−723(Pb−Free)8000/Tape & Reel*Available upon request

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecification Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

CharacteristicTotal Device Dissipation,FR−4 Board (Note 1.) @ TA = 25°CDerate above 25°CThermal Resistance, Junction to Ambient (Note 1.)Total Device Dissipation,FR−4 Board (Note 2.) @ TA = 25°CDerate above 25°CThermal Resistance, Junction to Ambient (Note 2.)Junction and Storage Temperature Range1.FR−4 @ Minimum Pad2.FR−4 @ 1.0 × 1.0 Inch Pad

SymbolPD2602.0RqJAPD6004.8RqJATJ, Tstg205−55 to +150mWmW/°C°C/W°C480mWmW/°C°C/WMaxUnithttp://onsemi.com

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DTA114EM3T5G Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0)Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)Emitter−Base Cutoff Current(VEB = 6.0 V, IC = 0)DTA114EM3T5GDTA124EM3T5GDTA144EM3T5GDTA114YM3T5GDTA114TM3T5GDTA143TM3T5GDTA123EM3T5GDTA143EM3T5GDTA143ZM3T5GDTA124XM3T5GDTA123JM3T5GDTA115EM3T5GDTA144WM3T5GICBOICEOIEBO−−−−−−−−−−−−−−−5050−−−−−−−−−−−−−−−−−1005000.50.20.10.20.91.92.31.50.180.130.20.050.13−−nAdcnAdcmAdcCollector−Base Breakdown Voltage (IC = 10 mA, IE = 0)Collector−Emitter Breakdown Voltage (Note 3.)(IC = 2.0 mA, IB = 0)V(BR)CBOV(BR)CEOVdcVdcON CHARACTERISTICS (Note 3.)

DC Current Gain(VCE = 10 V, IC = 5.0 mA)DTA114EM3T5GDTA124EM3T5GDTA144EM3T5GDTA114YM3T5GDTA114TM3T5GDTA143TM3T5GDTA123EM3T5GDTA143EM3T5GDTA143ZM3T5GDTA124XM3T5GDTA123JM3T5GDTA115EM3T5GDTA144WM3T5GhFE356080801601608.0158080808080−601001401402502501527140130140150140−−−−−−−−−−−−−−0.25VdcCollector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)(IC = 10 mA, IB = 5 mA) DTA123EM3T5G(IC = 10 mA, IB = 1 mA) DTA114TM3T5G/DTA143TM3T5G/ DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5GOutput Voltage (on)(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)DTA114EM3T5GDTA124EM3T5GDTA114YM3T5GDTA114TM3T5GDTA143TM3T5GDTA123EM3T5GDTA143EM3T5GDTA143ZM3T5GDTA124XM3T5GDTA123JM3T5GDTA144EM3T5GDTA115EM3T5GDTA144WM3T5GVCE(sat)VOL−−−−−−−−−−−−−VOH4.9−−−−−−−−−−−−−−0.20.20.20.20.20.20.20.20.20.20.20.20.2−Vdc(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)DTA114TM3T5G(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)DTA143TM3T5GDTA123EM3T5GDTA143EM3T5G3.Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

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DTA114EM3T5G Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

CharacteristicInput ResistorDTA114EM3T5GDTA124EM3T5GDTA144EM3T5GDTA114YM3T5GDTA114TM3T5GDTA143TM3T5GDTA123EM3T5GDTA143EM3T5GDTA143ZM3T5GDTA124XM3T5GDTA123JM3T5GDTA115EM3T5GDTA144WM3T5GDTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G DTA115EM3T5GDTA114YM3T5GDTA114TM3T5G/DTA143TM3T5GDTA123EM3T5G/DTA143EM3T5GDTA143ZM3T5GDTA124XM3T5GDTA123JM3T5GDTA144WM3T5G300250200150100500−󰀂50RqJA = 480°C/WSymbolR1Min7.015.432.97.07.03.31.53.33.315.41.547032.90.80.17−0.80.0550.380.0381.7Typ10224710104.72.24.74.7222.2100471.00.21−1.00.10.470.0472.1Max1328.661.113136.12.96.16.128.62.8613061.11.20.25−1.20.1850.560.0562.6UnitkWResistor Ratio/R1/R2PD, POWER DISSIPATION (MILLIWATTS)050100TA, AMBIENT TEMPERATURE (°C)

150Figure 1. Derating Curve

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DTA114EM3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G

VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)1IC/IB = 101000hFE, DC CURRENT GAIN (NORMALIZED)VCE = 10 VTA󰀃=󰀃−25°C0.175°C25°CTA󰀃=󰀃75°C10025°C−25°C0.01020IC, COLLECTOR CURRENT (mA)405010110IC, COLLECTOR CURRENT (mA)100Figure 2. VCE(sat) versus ICFigure 3. DC Current Gain4f = 1 MHzlE = 0 VTA = 25°C10075°C25°CTA󰀃=󰀃−25°CCob, CAPACITANCE (pF)3IC, COLLECTOR CURRENT (mA)10120.110.010.001012VO = 5 V67345Vin, INPUT VOLTAGE (VOLTS)

100010203040VR, REVERSE BIAS VOLTAGE (VOLTS)

50Figure 4. Output CapacitanceFigure 5. Output Current versus Input Voltage

100VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)10TA󰀃=󰀃−25°C25°C75°C10.10102030IC, COLLECTOR CURRENT (mA)

4050Figure 6. Input Voltage versus Output Current

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DTA114EM3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EM3T5G

VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)10

IC/IB = 10hFE, DC CURRENT GAIN (NORMALIZED)1000

VCE = 10 V1

TA󰀃=󰀃−25°C25°CTA󰀃=󰀃75°C100

25°C−25°C75°C0.1

0.01

020IC, COLLECTOR CURRENT (mA)

405010

110IC, COLLECTOR CURRENT (mA)

100Figure 7. VCE(sat) versus IC

Figure 8. DC Current Gain

4

IC, COLLECTOR CURRENT (mA)f = 1 MHzlE = 0 VTA = 25°C100

75°C10

25°CTA󰀃=󰀃−25°CCob, CAPACITANCE (pF)3

1

2

0.1

10.01

01234567Vin, INPUT VOLTAGE (VOLTS)

8VO = 5 V9100

010203040VR, REVERSE BIAS VOLTAGE (VOLTS)

500.001

Figure 9. Output CapacitanceFigure 10. Output Current versus Input Voltage

100Vin, INPUT VOLTAGE (VOLTS)VO = 0.2 VTA󰀃=󰀃−25°C1075°C25°C10.10102030IC, COLLECTOR CURRENT (mA)

4050Figure 11. Input Voltage versus Output Current

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DTA114EM3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G

VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)1

IC/IB = 101000hFE, DC CURRENT GAIN (NORMALIZED)TA󰀃=󰀃75°C25°C100−25°CTA󰀃=󰀃−25°C0.1

75°C25°C0.01

0102030IC, COLLECTOR CURRENT (mA)4010110IC, COLLECTOR CURRENT (mA)100Figure 12. VCE(sat) versus ICFigure 13. DC Current Gain10.8Cob, CAPACITANCE (pF)0.60.40.20

f = 1 MHzlE = 0 VTA = 25°C1001010.10.01VO = 5 V012TA󰀃=󰀃75°C25°C−25°C010203040VR, REVERSE BIAS VOLTAGE (VOLTS)

50IC, COLLECTOR CURRENT (mA)0.00134567Vin, INPUT VOLTAGE (VOLTS)

8󰀃910Figure 14. Output CapacitanceFigure 15. Output Current versus Input Voltage

100

VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)TA󰀃=󰀃−25°C10

25°C75°C1

󰀃0.1

0102030IC, COLLECTOR CURRENT (mA)

4050Figure 16. Input Voltage versus Output Current

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DTA114EM3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YM3T5G

VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)1

hFE, DC CURRENT GAIN (NORMALIZED)IC/IB = 10TA󰀃=󰀃−25°C25°C75°C1801601401201008060402001246810152040506070IC, COLLECTOR CURRENT (mA)

8090100VCE = 10 V25°C−25°CTA󰀃=󰀃75°C0.1

0.01

0.001

0204060IC, COLLECTOR CURRENT (mA)

80Figure 17. VCE(sat) versus IC

Figure 18. DC Current Gain

4.54

Cob, CAPACITANCE (pF)3.532.521.510.500246810152025303540VR, REVERSE BIAS VOLTAGE (VOLTS)

4550f = 1 MHzlE = 0 VTA = 25°C100

TA󰀃=󰀃75°CIC, COLLECTOR CURRENT (mA)25°C−25°C10

VO = 5 V10246Vin, INPUT VOLTAGE (VOLTS)

810Figure 19. Output CapacitanceFigure 20. Output Current versus Input Voltage

10

VO = 0.2 VVin, INPUT VOLTAGE (VOLTS)25°CTA󰀃=󰀃−25°C+12 V75°C1

Typical Applicationfor PNP BRTsLOAD0102030IC, COLLECTOR CURRENT (mA)

40500.1

Figure 21. Input Voltage versus Output CurrentFigure 22. Inexpensive, Unregulated Current Source

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DTA114EM3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EM3T5G

hFE, DC CURRENT GAIN (NORMALIZED)1

VCE(sat), MAXIMUM COLLECTORVOLTAGE (VOLTS)1000

75°C100

TA = −25°C25°C0.1

−25°C25°C75°C10

IC/IB = 10012345IC, COLLECTOR CURRENT (mA)

67VCE = 10 V1110IC, COLLECTOR CURRENT (mA)

1000.01

Figure 23. Maximum Collector Voltage versus

Collector Current

Figure 24. DC Current Gain

1.2

IC, COLLECTOR CURRENT (mA)Cob, CAPACITANCE (pF)1.00.80.60.40.20

f = 1 MHzIE = 0 VTA = 25°C100

25°C10

TA = −25°C75°C1

VO = 5 V0.1

012345671001020304050VR, REVERSE BIAS VOLTAGE (VOLTS)

60Vin, INPUT VOLTAGE (VOLTS)

Figure 25. Output CapacitanceFigure 26. Output Current versus Input Voltage

100Vin, INPUT VOLTAGE (VOLTS)25°C10TA = −25°C175°C02VO = 0.2 V46810121416IC, COLLECTOR CURRENT (mA)

1820Figure 27. Input Voltage versus Output Current

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DTA114EM3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WM3T5G

hFE, DC CURRENT GAIN (NORMALIZED)1

VCE(sat), MAXIMUM COLLECTORVOLTAGE (VOLTS)100075°CTA = −25°C25°CTA = −25°C0.1

75°C10025°CIC/IB = 100510152025303540IC, COLLECTOR CURRENT (mA)

4550VCE = 10 V10110IC, COLLECTOR CURRENT (mA)1000.01

Figure 28. Maximum Collector Voltage versus

Collector Current

Figure 29. DC Current Gain1.4Cob, CAPACITANCE (pF)1.21.00.80.60.40.2001020304050VR, REVERSE BIAS VOLTAGE (VOLTS)

60IC, COLLECTOR CURRENT (mA)f = 1 MHzIE = 0 VTA = 25°C100

75°CTA = −25°C25°C10

1

0.10.01

VO = 5 V0.001

012345671011Vin, INPUT VOLTAGE (VOLTS)

Figure 30. Output CapacitanceFigure 31. Output Current versus Input Voltage

100Vin, INPUT VOLTAGE (VOLTS)VO = 0.2 V10TA = −25°C75°C125°C05101520IC, COLLECTOR CURRENT (mA)

25Figure 32. Input Voltage versus Output Current

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DTA114EM3T5G Series

PACKAGE DIMENSIONS

SOT−723CASE 631AA−01

ISSUE A

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMTHICKNESS OF BASE MATERIAL.

4.DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS OR GATE BURRS.

−X−Db1312A−Y−Eb2X0.08 (0.0032)XYLCHEeSTYLE 1:

PIN 1.BASE 2.EMITTER 3.COLLECTOR

DIMAbb1CDEeHEL

MILLIMETERSMINNOMMAX0.450.500.550.150.200.270.250.30.350.070.120.171.151.201.250.750.800.85

0.40 BSC

1.151.201.250.150.200.25INCHES

MINNOMMAX0.0180.0200.0220.00590.00790.01060.0100.0120.0140.00280.00470.00670.0450.0470.0490.030.0320.034

0.016 BSC

0.0450.0470.0490.00590.00790.0098

SOLDERING FOOTPRINT*

0.400.01570.400.01571.00.0390.400.01570.400.01570.400.0157SCALE 20:1

mmǓǒinches

SOT−723

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

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DTA114EM3T5G Series

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll FreeUSA/CanadaJapan: ON Semiconductor, Japan Customer Focus Center2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051Phone: 81−3−5773−3850http://onsemi.com12DTA114EM3/D