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专利名称：ESD PROTECTION CIRCUIT
发明人：Da-Wei LAI,Handoko Linewih,Ying-Chang Lin申请号：US13803091申请日：20130314
公开号：US20130207179A1公开日：20130815
专利附图：
摘要：A device which includes a substrate defined with a device region with an ESDprotection circuit having at least first and second transistors is disclosed. Each of thetransistors includes a gate having first and second sides, a first diffusion region in thedevice region adjacent to the first side of the gate, a second diffusion region in the device
region displaced away from the second side of the gate, and a drift isolation regiondisposed between the gate and the second diffusion region. A first device wellencompasses the device region and a second device well is disposed within the firstdevice well. The device also includes a drift well which encompasses the second diffusionregion. Edges of the drift well do not extend below the gate and is away from a channelregion. A drain well is disposed under the second diffusion region and within the driftwell.
申请人：GlobalFoundries Singapore Pte. Ltd.
地址：US
国籍：US
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