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专利名称：MEMORY DEVICE AND RELATED METHOD发明人：Gong ZHANG申请号：US15043165申请日：20160212
公开号：US20170004875A1公开日：20170105
专利附图：
摘要：A memory device may include a first inverter, a second inverter, and a controltransistor. The control transistor is electrically connected to each of an output terminalof the first inverter and an input terminal of the second inverter for controlling anelectrical connection between the output terminal of the first inverter and the input
terminal of the second inverter.
申请人：Semiconductor Manufacturing International (Shanghai)
Corporation,Semiconductor Manufacturing International (Beijing) Corporation
地址：Shanghai CN,Beijing CN
国籍：CN,CN
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