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专利名称：SELF-ALIGNED CONTACT发明人：Johnathan E. Faltermeier,Stephan
Grunow,Kangguo Cheng,KevinPetrarca,Kaushik Kumar,Lawrence A.Clevenger,Shom Ponoth,VidhyaRamachandran
申请号：US12372174申请日：20090217
公开号：US20100210098A1公开日：20100819
专利附图：
摘要：A method of forming contacts for semiconductor devices, the method includingdepositing an inter-level dielectric (ILD) over a plurality of gate stacks, in which the divotswithin the inter-level dielectric layer are defined by the spaces between the gate stacks,filling the divots with an initial fill material, depositing a masking material on the dielectricover the gate stacks, and selectively etching the fill material to form contact vias. The fillmaterial may be a self-assembly material such as a multi-block copolymer in which theblocks self organize vertically within the divots, so that a selective etch of the blockmaterial will remove the vertically organized blocks from the divot, but leave at least oneblock over the gate regions. In another embodiment, the fill material may be a metal, andthe masking material may be a parylene based polymer.
申请人：Johnathan E. Faltermeier,Stephan Grunow,Kangguo Cheng,KevinPetrarca,Kaushik Kumar,Lawrence A. Clevenger,Shom Ponoth,Vidhya Ramachandran
地址：Delanson NY US,Poughkeepsie NY US,Guilderland NY US,Newburgh NYUS,Poughkeepsie NY US,LaGrangeville NY US,Clifton Park NY US,San Diego CA US
国籍：US,US,US,US,US,US,US,US
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