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专利名称：Self-aligned barrier layers for interconnects发明人：Roy Gerald Gordon,Hoon Kim申请号：US12408473申请日：20090320公开号：US07932176B2公开日：20110426
专利附图：
摘要：An interconnect structure for integrated circuits incorporates manganesesilicate and manganese silicon nitride layers that completely surrounds copper wires inintegrated circuits and methods for making the same are provided. The manganesesilicate forms a barrier against copper diffusing out of the wires, thereby protecting the
insulator from premature breakdown, and protecting transistors from degradation bycopper. The manganese silicate and manganese silicon nitride also promote strongadhesion between copper and insulators, thus preserving the mechanical integrity of thedevices during manufacture and use. The strong adhesion at the copper-manganesesilicate and manganese silicon nitride interfaces also protect against failure byelectromigration of the copper during use of the devices. The manganese-containingsheath also protects the copper from corrosion by oxygen or water from itssurroundings.
申请人：Roy Gerald Gordon,Hoon Kim
地址：Cambridge MA US,Cambridge MA US
国籍：US,US
代理机构：Wilmer Cutler Pickering Hale and Dorr LLP
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