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专利名称：Fabrication process for direct electron
injection field-emission display device
发明人：Michael D. Potter申请号：US08/498507申请日：19950705公开号：US05616061A公开日：19970401
摘要：A lateral-emitter electron field-emission display device structure incorporates athin-film emitter having an emitting edge and extending into in direct contact with a non-conducting or very high resistivity phosphor, thereby eliminating the gap between theemitter and the phosphor. Such a gap has been a part of all field-emission display devicesin the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in aplane parallel to the device's substrate and has an inherently small radius of curvature atits emitting edge. A fabrication process specially adapted to make the new structureincludes a directional trench etch, which both defines the emitting edge and provides anopening to receive a non-conducting phosphor. This phosphor covers an anode and isautomatically aligned in contact with the emitter edge. When an electrical bias voltage isapplied between the emitter and anode, electrons are injected directly into the phosphormaterial from the emitter edge, exciting cathodoluminescence in the phosphor to emitlight which is visible in a wide range of viewing angles. With minor variations in thefabrication process, a lateral-emitter electron field emission display device may be madewith an extremely small emitter- phosphor gap, having a width less than 100 times thethickness of the ultra-thin emitter. Embodiments in which the gap width is zero are
characterized as edge-contact light-emitting diodes (or triodes or tetrodes if theyinclude control electrodes).
申请人：ADVANCED VISION TECHNOLOGIES, INC.
代理人：Theodore R. Touw
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