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专利名称：Memory with write assist circuit
发明人：Yen-Huei Chen,Hidehiro Fujiwara,Hung-Jen
Liao,Jonathan Tsung-Yung Chang
申请号：US15099706申请日：20160415公开号：US09741429B1公开日：20170822
专利附图：
摘要：A memory device with an array of memory cells, a write driver circuit, and a writeassist circuit is disclosed. The write driver circuit and the write assist circuit can be locatedopposite to one another relative to the array of memory cells. The write assist circuit can
compensate for a parasitic element in bitlines by transferring write voltages toaddressed memory cells located in a portion of a memory array opposite to the writedriver circuit. The parasitic element can be, for example, a bitline path resistance thatcauses a voltage differential between a voltage at the output of the write driver circuitand another voltage at a bitline location associated with the addressed memory cell. Thewrite assist circuit can compensate for the voltage differential at the bitline locationassociated with the addressed memory cell; thus improving the performance of memorywrite operations.
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
地址：Hsinchu TW
国籍：TW
代理机构：Sterne, Kessler, Goldstein & Fox P.L.L.C.
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