专利内容由知识产权出版社提供
专利名称：EXTREMELY LOW RESISTANCE MATERIALS
AND METHODS FOR MODIFYING ANDCREATING SAME
发明人：Douglas J. GILBERT申请号：US126870申请日：20101002
公开号：US20110082045A1公开日：20110407
摘要：In some implementations of the invention, existing extremely low resistancematerials (“ELR materials”) may be modified and/or new ELR materials may be createdby enhancing (in the case of existing ELR materials) and/or creating (in the case of newELR materials) an aperture within the ELR material such that the aperture is maintained atincreased temperatures so as not to impede propagation of electrical charge therethrough. In some implementations of the invention, as long as the propagation ofelectrical charge through the aperture remains unimpeded, the material should remain inan ELR state; otherwise, as the propagation of electrical charge through the aperturebecomes impeded, the ELR material begins to transition into a non-ELR state.
申请人：Douglas J. GILBERT
地址：Flagstaff AZ US
国籍：US
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