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专利名称：Opto-electronic integrated circuit发明人：Sosaku Sawada,Goro Sasaki,Hiroshi Yano申请号：US08/235947申请日：19940502公开号：US05475256A公开日：19951212
摘要：An opto-electronic integrated circuit is arranged to comprise a photodetectorand a tunnel emitter bipolar transistor for first-stage amplification of a currentgenerated in the photodetector, as formed on a substrate. The tunnel emitter bipolartransistor can be operated at high speed and has a high amplification factor, so that noisedue to the base current can be reduced upon amplification of the current generated inthe photodetector by light detection.
申请人：SUMITOMO ELECTRIC INDUSTRIES, LTD.
代理机构：Beveridge, DeGrandi, Weilacher & Young
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